An electron beam exposure apparatus for exposing a pattern to a wafer by a plurality of electron beams, comprising an electron beam generating section for generating a plurality of electron beams, a deflecting section having a plurality of deflectors for deflecting the plurality of electron beams, and a screening section having a first screen electrode disposed between the plurality of deflectors and extending from a position close to the electron beam generating section from one end of the deflector to a position close to the wafer from one end of the deflector along the direction of radiation of electron beams.
Класс патентной классификации США: | 373/10; 219/121.12; 250/492.2; 373/14 |
Класс совместной патентной классификации: | B82Y 10/00 (20130101); H01J 37/3177 (20130101); H01J 37/1472 (20130101); B82Y 40/00 (20130101) |
Класс международной патентной классификации (МПК): | H01J 37/147 (20060101); H01J 37/317 (20060101); H01J 037/305 (); B23K 015/00 (); A61N 005/00 () |
Область поиска: | ;373/10-14 ;219/121.11,121.12,121.18,121.19 ;250/396R,396ML,392.2,398 ;396/611 ;355/53,72 |