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Патент США № | 7342241 |
Автор(ы) | Aoki и др. |
Дата выдачи | 11 марта 2008 г. |
The present invention is to provide an electron-beam lithography method and an electron-beam lithography apparatus that can draw patterns with a high precision despite a change in barometric pressure, can ensure a satisfactory throughput, and are inexpensive. In the electron-beam lithography method that uses an electron beam to draw patterns on a sample, a difference between a current measured barometric pressure and a previous measured barometric pressure, and an elapsed time between their barometric pressure-measurement points in time are determined. When the rate of the difference of their barometric pressures with respect to the elapsed time is equal to or larger than a prescribed barometric pressure change rate value, a drawing precision is calibrated.
Авторы: | Yasuko Aoki (Hitachi, JP), Tsutomu Tawa (Hitachinaka, JP), Yoshimitsu Saze (Hitachinaka, JP) |
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Заявитель: | Hitachi High-Technologies Corporation (Tokyo, JP) |
ID семейства патентов | 35598074 |
Номер заявки: | 11/179,628 |
Дата регистрации: | 13 июля 2005 г. |
Document Identifier | Publication Date | |
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US 20060011080 A1 | Jan 19, 2006 | |
Jul 15, 2004 [JP] | 2004-208692 | |||
Класс патентной классификации США: | 250/492.22; 250/396R; 250/398; 250/492.1; 250/492.2; 250/492.3 |
Класс совместной патентной классификации: | B82Y 10/00 (20130101); B82Y 40/00 (20130101); H01J 37/3174 (20130101); H01J 2237/31793 (20130101) |
Класс международной патентной классификации (МПК): | G21K 5/04 (20060101); H01J 33/00 (20060101) |
Область поиска: | ;250/492.22,492.1,492.2,492.3,396R,398,400 |
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