Патент США № | 7959830 |
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Автор(ы) | Jin |
Дата выдачи | 14 июня 2011 г. |
This invention discloses novel nanocomposite material structures which are strong, highly conductive, and fatigue-resistant. It also discloses novel fabrication techniques to obtain such structures. The new nanocomposite materials comprise a high-conductivity base metal, such as copper, incorporating high-conductivity dispersoid particles that simultaneously minimize field enhancements, maintain good thermal conductivity, and enhance mechanical strength. The use of metal nanoparticles with electrical conductivity comparable to that of the base automatically removes the regions of higher RF field and enhanced current density. Additionally, conductive nanoparticles will reduce the surface's sensitivity to arc or sputtering damage. If the surface is sputtered away to uncover the nanoparticles, their properties will not be dramatically different from the base surface. Most importantly, the secondary electron emission coefficients of all materials in the nanocomposite are small and close to unity, whereas the previously used insulating particles can produce significant and undesirable electron multiplication.
Авторы: | Sungho Jin (San Diego, CA) |
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Заявитель: | The Regents of the University of California (Oakland, CA) |
ID семейства патентов | 34748927 |
Номер заявки: | 10/584,680 |
Дата регистрации: | 23 декабря 2004 г. |
PCT Filed: | December 23, 2004 |
PCT No.: | PCT/US2004/043458 |
371(c)(1),(2),(4) Date: | May 01, 2007 |
PCT Pub. No.: | WO2005/065281 |
PCT Pub. Date: | July 21, 2005 |
Document Identifier | Publication Date | |
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US 20080044685 A1 | Feb 21, 2008 | |
Application Number | Filing Date | Patent Number | Issue Date | ||
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60533618 | Dec 31, 2003 | ||||
Класс патентной классификации США: | 252/500; 148/405; 148/411; 148/432; 148/668; 148/679; 205/109; 205/169; 205/96; 419/61; 419/64; 428/323; 428/332; 428/403; 428/551; 428/655; 438/478 |
Класс совместной патентной классификации: | B22F 1/0018 (20130101); H01B 1/026 (20130101); C25D 15/02 (20130101); C25D 5/48 (20130101); C22C 47/04 (20130101); B82Y 30/00 (20130101); B22F 1/025 (20130101); B22F 1/0085 (20130101); B22F 3/02 (20130101); B22F 3/10 (20130101); B22F 3/10 (20130101); B22F 2998/00 (20130101); H01L 23/3732 (20130101); B22F 2999/00 (20130101); B22F 2998/10 (20130101); B22F 2998/00 (20130101); B22F 2207/03 (20130101); B22F 2998/10 (20130101); B22F 2999/00 (20130101); B22F 2201/01 (20130101) |
Класс международной патентной классификации (МПК): | H01B 1/02 (20060101); B22F 3/00 (20060101); H01L 21/763 (20060101); B32B 3/02 (20060101) |
Область поиска: | ;252/500,62.2,182.1 ;428/615,627,655,323,357,547 ;427/212,217 ;75/245-247,343-374 ;205/74,76 |
4540546 | September 1985 | Giessen |
5573608 | November 1996 | Miyake et al. |
5728195 | March 1998 | Eastman et al. |
5759230 | June 1998 | Chow et al. |
5925198 | July 1999 | Das |
5958575 | September 1999 | Fijimoto et al. |
6858521 | February 2005 | Jin |
2001/0008157 | July 2001 | Bishop et al. |
2004/0071951 | April 2004 | Jin |
2004/0146734 | July 2004 | Miller et al. |
Koch, C.C., "Nanostructured Materials--Processing, Properties and Potential Applications," William Andrew Publishing/Noyes, 2001, pp. 439-446. cited by other. |