Патент США № | 8685592 |
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Автор(ы) | Kim и др. |
Дата выдачи | 01 апреля 2014 г. |
An inorganic proton conductor for an electrochemical device and an electrochemical device using the inorganic proton conductor, the inorganic proton conductor including a tetravalent metallic element and an alkali metal.
Авторы: | Tae-young Kim (Seoul, KR), Pil-won Heo (Yongin-si, KR), Sang-kyun Kang (Seoul, KR) | ||||||||||
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Патентообладатель: |
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Заявитель: | Samsung Electronics Co., Ltd. (Suwon-si, Gyeonggi-do, KR) |
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ID семейства патентов | 43383576 | ||||||||||
Номер заявки: | 12/834,257 | ||||||||||
Дата регистрации: | 12 июля 2010 г. |
Document Identifier | Publication Date | |
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US 20110086290 A1 | Apr 14, 2011 | |
Oct 9, 2009 [KR] | 10-2009-0096397 | |||
Класс патентной классификации США: | 429/496; 429/208; 429/218.1; 429/304; 429/479; 429/480; 429/484; 75/228 |
Класс совместной патентной классификации: | H01M 8/1246 (20130101); H01M 8/1253 (20130101); H01M 2008/1293 (20130101); H01M 2300/0074 (20130101); H01M 2300/0077 (20130101); Y02E 60/523 (20130101); Y02E 60/525 (20130101); Y02E 60/522 (20130101) |
Класс международной патентной классификации (МПК): | H01M 8/10 (20060101); H01M 10/16 (20060101); H01M 4/36 (20060101); H01M 10/0562 (20100101); H01M 6/18 (20060101); H01M 4/58 (20100101); H01M 4/13 (20100101); H01M 8/12 (20060101); B22F 3/00 (20060101); B22F 1/00 (20060101) |
Область поиска: | ;429/479,480,484,496,304,218.1,208 ;75/228 |
2005/0221143 | October 2005 | Kwon et al. |
2006/0134507 | June 2006 | Park et al. |
2009/0117436 | May 2009 | Choi et al. |
2008-053224 | Mar 2008 | JP | |||
2008-053225 | Mar 2008 | JP | |||
2008/218408 | Sep 2008 | JP | |||
2009-110716 | May 2009 | JP | |||
2009-158131 | Jul 2009 | JP | |||
10-2008-0013101 | Feb 2008 | KR | |||
Attidekou et al. Journal of the Electrochemical Society vol. 154 No. 3 pp. A217-A220 2007. cited by examiner . Nagao, Masahiro, et al., "Proton Conduction in In.sup.3+-Doped SNP.sup.2O.sup.7 at Intermediate Temperatures", Journal of the Electrochemical Society, 153 (8), (2006) pp. A1604-A1609. cited by applicant . U.S. Appl. No. 13/081,667, filed Apr. 7, 2011, Tae-young Kim et al., Samsung Electronics Co., Ltd. cited by applicant . European Search Report issued Feb. 14, 2011, in European Patent Application No. 10175484.4. cited by applicant . Yaroslavtsev et al.: "Modification of solid state proton conductors" Solid State Ionics, vol. 176, No. 39-40, Dec. 1, 2005, pp. 2935-2940. cited by applicant . M. Nagao et al.: "A Proton-Conducting In.sup.3+-Doped SnP.sub.2O.sub.7 Electrolyte for Intermediate-Temperature Fuel Cells" Electrochemical and Solid-State Letters, vol. 9, No. 3, Jan. 12, 2006, pp. A105-A109. cited by applicant . K. Genzaki et al.: "Proton Conductivity and Solid Acidity of Mg-, In- and Al-Doped SnP.sub.2O.sub.7" Journal of the Electrochemical Society, vol. 156, No. 7, May 6, 2009, pp. B806-B810. cited by applicant . M. Nagano et al.: "Proton Conduction in In.sup.3+-Doped SnP.sub.2O.sub.7 at Intermediate Temperatures" Journal of the Electrochemical Society, vol. 153, No. 8, Jun. 15, 2006, pp. A1604-A1609. cited by applicant. |