Библиографическая ссылка на патент
Pat. 10003189 United States, Int. Cl.22 H02M 3/158, G05F 1/59, H02H 9/00, H02M 1/36. Parallel-connected semiconductor devices with current sharing technology and control method thereof : Appl. N 15/054098 : Filed 25.02.2016 : Pub. 19.06.2018 : / Qian Ouyang ; Assignee Hangzhou Mps Semiconductor Technology Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10003189/en?oq=US10003189.html (дата обращения: ДД.ММ.ГГГГ).