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Pat. 10003249 United States, Int. Cl.22 H02M 1/08, H02M 1/088, H02M 7/00, H02M 7/21, H03K 17/06, H03K 17/082, H02M 7/5387, H03K 17/08. Insulated gate semiconductor device including switchable insulated gate semiconductor element : Appl. N 14/879553 : Filed 09.10.2015 : Pub. 19.06.2018 : / Seiji Momota ; Assignee Fuji Electric Co Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10003249/en?oq=US10003249.html (дата обращения: ДД.ММ.ГГГГ).