Библиографическая ссылка на патент
Pat. 10026803 United States, Int. Cl.22 H01L 29/739, H01L 21/265, H01L 21/324, H01L 29/06, H01L 29/10, H01L 29/36, H01L 29/868, H01L 29/66, H02M 7/537. Semiconductor device, power conversion device, and method of manufacturing semiconductor device : Appl. N 15/666096 : Filed 01.08.2017 : Pub. 17.07.2018 : / Katsumi Nakamura ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10026803/en?oq=US10026803.html (дата обращения: ДД.ММ.ГГГГ).