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Pat. 10032755 United States, Int. Cl.22 H01L 25/11, H01L 23/367, H01L 23/495, H01L 23/552, H01L 23/64, H02M 7/00, H05K 7/14, H05K 7/20. Power semiconductor arrangement having a plurality of power semiconductor switching elements and reduced inductance asymmetry : Appl. N 15/345751 : Filed 08.11.2016 : Pub. 24.07.2018 : / Daniel Domes, Reinhold Bayerer, Waleri Brekel ; Assignee Infineon Technologies Ag ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10032755/en?oq=US10032755.html (дата обращения: ДД.ММ.ГГГГ).