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Pat. 10032875 United States, Int. Cl.22 H01L 29/15, H01L 21/02, H01L 21/265, H01L 29/20, H01L 29/205, H01L 29/36, H01L 29/66, H01L 29/778, H02M 3/335, H03F 3/193, H03F 3/21. Semiconductor device and method for manufacturing the semiconductor device : Appl. N 15/461042 : Filed 16.03.2017 : Pub. 24.07.2018 : / Atsushi Yamada ; Assignee Fujitsu Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10032875/en?oq=US10032875.html (дата обращения: ДД.ММ.ГГГГ).