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Pat. 10038438 United States, Int. Cl.22 H03B 1/00, H01L 29/16, H01L 29/20, H02M 1/00, H02M 1/08, H02M 1/32, H02M 7/48, H02M 7/5387, H03K 3/00, H03K 17/0812, H03K 17/567. Power semiconductor element driving circuit : Appl. N 15/303149 : Filed 27.05.2015 : Pub. 31.07.2018 : / Kosuke Nakano, Keisuke Iwasawa, Takayoshi Miki, Hiroshi Nakatake ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10038438/en?oq=US10038438.html (дата обращения: ДД.ММ.ГГГГ).
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