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Pat. 10043727 United States, Int. Cl.22 H01L 21/00, H01L 21/02, H01L 23/00, H01L 23/29, H02M 3/335, H03F 1/32, H03F 3/19, H03F 3/195, H01L 23/31, H02M 1/42, H02M 3/337. Compound semiconductor device and method of manufacturing the same : Appl. N 15/043882 : Filed 15.02.2016 : Pub. 07.08.2018 : / Shirou Ozaki, Naoya Okamoto ; Assignee Fujitsu Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10043727/en?oq=US10043727.html (дата обращения: ДД.ММ.ГГГГ).