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Pat. 10056460 United States, Int. Cl.22 H01L 29/20, H01L 29/205, H01L 29/40, H01L 29/66, H01L 29/778, H02M 3/335, H03F 1/32, H03F 3/19, H02M 1/00, H02M 3/337. Semiconductor device and manufacturing method thereof : Appl. N 15/236707 : Filed 15.08.2016 : Pub. 21.08.2018 : / Shirou Ozaki, Naoya Okamoto ; Assignee Fujitsu Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10056460/en?oq=US10056460.html (дата обращения: ДД.ММ.ГГГГ).