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Pat. 10069415 United States, Int. Cl.22 H01L 29/76, H01L 27/06, H01L 29/40, H01L 29/417, H01L 29/423, H01L 29/49, H01L 29/78, H01L 49/02, H02M 1/08, H02M 3/158, H03K 7/08, H02M 1/44, H03K 17/16, H03K 17/687. Trench MOSFET having an independent coupled element in a trench : Appl. N 15/206990 : Filed 11.07.2016 : Pub. 04.09.2018 : / Tetsuo Sato, Tomoaki Uno, Hirokazu Kato, Nobuyoshi Matsuura ; Assignee Renesas Electronics America Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10069415/en?oq=US10069415.html (дата обращения: ДД.ММ.ГГГГ).