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Pat. 10074747 United States, Int. Cl.22 H01L 29/78, G06K 19/077, H01L 21/8236, H01L 23/66, H01L 27/088, H01L 29/24, H01L 29/66, H01L 29/786, G11C 7/00, G11C 19/28, H02M 3/07. Semiconductor device and manufacturing method thereof : Appl. N 15/372493 : Filed 08.12.2016 : Pub. 11.09.2018 : / Shunpei Yamazaki, Jun Koyama, Hiroyuki Miyake, Kei Takahashi, Kouhei Toyotaka, Masashi Tsubuku, Kosei Noda, Hideaki Kuwabara ; Assignee Semiconductor Energy Laboratory Co Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10074747/en?oq=US10074747.html (дата обращения: ДД.ММ.ГГГГ).