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Pat. 10103157 United States, Int. Cl.22 H01L 27/11, G11C 7/04, G11C 7/10, G11C 16/12, H01L 21/326, H01L 23/528, H01L 27/11524, H01L 27/11526, H01L 27/11548, H01L 29/06, H01L 29/08, H01L 29/10, H01L 29/36, H01L 29/78, H01L 29/788, H02M 3/07, G11C 16/04, H02M 1/00. Nonvolatile memory having a shallow junction diffusion region : Appl. N 15/648464 : Filed 13.07.2017 : Pub. 16.10.2018 : / Chun-Hsiao Li, Wei-Ren Chen, Wein-Town Sun ; Assignee Ememory Technology Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10103157/en?oq=US10103157.html (дата обращения: ДД.ММ.ГГГГ).