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Pat. 10122274 United States, Int. Cl.22 H02M 3/158, G01R 15/04, G01R 19/165, H01L 29/20, H01L 29/778, H02M 1/32, H03K 17/0812. Multi-function power control circuit using enhancement mode gallium nitride (GaN) high electron mobility transistors (HEMTs) : Appl. N 15/374756 : Filed 09.12.2016 : Pub. 06.11.2018 : / Anthony G. P. Marini, James L. Larrauri, Simon P. Wainwright, Max Zafrani ; Assignee Freebird Semiconductor Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10122274/en?oq=US10122274.html (дата обращения: ДД.ММ.ГГГГ).