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Pat. 10192964 United States, Int. Cl.22 H01L 29/00, H01L 23/495, H01L 23/66, H01L 29/20, H01L 29/205, H01L 29/40, H01L 29/423, H01L 29/66, H01L 29/778, H02M 5/458, H03F 1/32, H03F 3/193, H03F 3/195, H03F 3/21, H02M 1/42, H02M 3/337. Compound semiconductor device and method of manufacturing the same : Appl. N 15/617133 : Filed 08.06.2017 : Pub. 29.01.2019 : / Youichi Kamada, Shirou Ozaki ; Assignee Fujitsu Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10192964/en?oq=US10192964.html (дата обращения: ДД.ММ.ГГГГ).