Библиографическая ссылка на патент
Pat. 10199487 United States, Int. Cl.22 H01L 29/778, H01L 23/31, H01L 23/495, H01L 23/535, H01L 27/06, H01L 29/20, H01L 29/866, H01L 29/94, H02M 1/08, H02M 3/158, H02M 7/5387, H03K 17/687. Multi-drain gallium-nitride module with multiple voltage ratings : Appl. N 15/979807 : Filed 15.05.2018 : Pub. 05.02.2019 : / Noureldeen Elsayad, Mehdi Shojaie, Osama Mohammed ; Assignee Florida International University Fiu ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10199487/en?oq=US10199487.html (дата обращения: ДД.ММ.ГГГГ).