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Pat. 10204899 United States, Int. Cl.22 H01L 21/28, H01L 21/8234, H01L 23/00, H01L 23/31, H01L 23/495, H01L 27/06, H01L 29/49, H01L 29/66, H01L 29/78, H02M 3/155, H02M 7/00, H01L 29/10, H01L 29/417, H01L 29/423, H01L 29/45, H01L 29/872. Semiconductor device with first and second chips and connections thereof and a manufacturing method of the same : Appl. N 15/700679 : Filed 11.09.2017 : Pub. 12.02.2019 : / Masaki Shiraishi, Tomoaki Uno, Nobuyoshi Matsuura ; Assignee Renesas Electronics Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10204899/en?oq=US10204899.html (дата обращения: ДД.ММ.ГГГГ).