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Pat. 10217829 United States, Int. Cl.22 H01L 29/205, H01L 21/02, H01L 23/31, H01L 29/40, H01L 29/66, H01L 29/778, H03F 1/32, H03F 3/193, H03F 3/195, H03F 3/24, H01L 21/027, H01L 21/306, H01L 21/311, H01L 23/495, H01L 29/20, H01L 29/417, H01L 29/423, H02M 1/42, H02M 5/458, H03F 3/21. Compound semiconductor device including diffusion preventing layer to suppress current collapse phenomenon, method of manufacturing compound semiconductor device, power supply unit, and amplifier : Appl. N 15/685063 : Filed 24.08.2017 : Pub. 26.02.2019 : / Kozo Makiyama ; Assignee Fujitsu Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10217829/en?oq=US10217829.html (дата обращения: ДД.ММ.ГГГГ).