Библиографическая ссылка на патент
Pat. 10224817 United States, Int. Cl.22 H02M 3/158, H02M 1/36, H02M 1/38, H03F 3/217, H03F 3/38, H03K 17/687. Power transistor control signal gating : Appl. N 16/040403 : Filed 19.07.2018 : Pub. 05.03.2019 : / Santosh Sharma, Thomas Ribarich, Victor Sinow, Daniel Marvin Kinzer ; Assignee Navitas Semiconductor Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10224817/en?oq=US10224817.html (дата обращения: ДД.ММ.ГГГГ).