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Pat. 10263506 United States, Int. Cl.22 H02M 1/32, H02M 7/537, H03K 17/081, H03K 17/082, H02M 1/088, H03K 17/0814. Circuit arrangement and method for gate-controlled power semiconductor devices : Appl. N 15/060645 : Filed 04.03.2016 : Pub. 16.04.2019 : / Thomas Brueckner, Roland Jakob ; Assignee Ge Energy Power Conversion Technology Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10263506/en?oq=US10263506.html (дата обращения: ДД.ММ.ГГГГ).