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Pat. 10276671 United States, Int. Cl.22 H01L 29/40, H01L 23/31, H01L 23/482, H01L 23/495, H01L 23/66, H01L 27/06, H01L 29/20, H01L 29/205, H01L 29/66, H01L 29/778, H01L 49/02, H02M 1/42, H02M 5/458, H03F 1/32, H03F 3/193, H03F 3/195, H03F 3/213, H03F 3/24. Semiconductor device, method for manufacturing semiconductor device, and electronic device : Appl. N 15/798843 : Filed 31.10.2017 : Pub. 30.04.2019 : / Shirou Ozaki ; Assignee Fujitsu Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10276671/en?oq=US10276671.html (дата обращения: ДД.ММ.ГГГГ).