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Pat. 10312850 United States, Int. Cl.22 H02M 1/08, H02M 1/42, H02M 3/158, H02M 7/5395, H02P 6/08, H02P 27/08, H02P 27/10, H02P 29/40, H02P 29/50, H02M 1/00. Semiconductor device and power conversion device : Appl. N 15/814213 : Filed 15.11.2017 : Pub. 04.06.2019 : / Masashi Tsubota ; Assignee Renesas Electronics Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10312850/en?oq=US10312850.html (дата обращения: ДД.ММ.ГГГГ).