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Pat. 10340816 United States, Int. Cl.22 H02M 1/00, H01L 23/34, H01L 25/07, H01L 25/18, H01L 29/739, H02M 1/084, H02M 1/32, H02M 7/00, H02M 7/537. Semiconductor device and multiphase semiconductor device : Appl. N 15/324031 : Filed 29.08.2014 : Pub. 02.07.2019 : / Koichi Ushijima ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10340816/en?oq=US10340816.html (дата обращения: ДД.ММ.ГГГГ).