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Pat. 10361618 United States, Int. Cl.22 H03K 17/16, H02H 7/12, H02M 1/08, H02M 1/32, H02M 3/156, H02M 3/158, H03K 17/06, H03K 17/082, H02M 1/00. Driving circuit for high-side transistor : Appl. N 16/028503 : Filed 06.07.2018 : Pub. 23.07.2019 : / Yuichi Shinozaki ; Assignee Rohm Co Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10361618/en?oq=US10361618.html (дата обращения: ДД.ММ.ГГГГ).