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Pat. 10418073 United States, Int. Cl.22 G05F 1/10, G11C 5/14, G11C 16/30, H02M 3/07. Power noise reduction technique for high density memory with frequency adjustments : Appl. N 16/163728 : Filed 18.10.2018 : Pub. 17.09.2019 : / Harish N. Venkata, Yu-Feng Chen ; Assignee Micron Technology Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10418073/en?oq=US10418073.html (дата обращения: ДД.ММ.ГГГГ).