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Pat. 10468479 United States, Int. Cl.22 H01L 29/78, H01L 29/06, H01L 29/40, H02M 1/08, H01L 29/10, H01L 29/423, H02M 1/00, H02M 3/155. VDMOS having a drift zone with a compensation structure : Appl. N 14/277506 : Filed 14.05.2014 : Pub. 05.11.2019 : / Armin Willmeroth, Franz Hirler, Bjoern Fischer, Joachim Weyers ; Assignee Infineon Technologies Austria Ag ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10468479/en?oq=US10468479.html (дата обращения: ДД.ММ.ГГГГ).