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Pat. 10468514 United States, Int. Cl.22 H01L 29/778, H01L 21/28, H01L 29/51, H02M 3/335, H03F 1/32, H03F 3/16, H01L 29/20, H01L 29/417, H01L 29/423. Semiconductor device and method for producing the same, power supply device, and high-frequency amplifier : Appl. N 15/664318 : Filed 31.07.2017 : Pub. 05.11.2019 : / Shirou Ozaki, Naoya Okamoto ; Assignee Fujitsu Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10468514/en?oq=US10468514.html (дата обращения: ДД.ММ.ГГГГ).