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Pat. 10497795 United States, Int. Cl.22 H01L 29/66, H01L 21/768, H01L 23/535, H01L 29/06, H01L 29/735, H01L 29/861, H02M 3/156. Triple well isolated diode and method of making : Appl. N 15/200727 : Filed 01.07.2016 : Pub. 03.12.2019 : / Chih-Chang Cheng, Fu-Yu Chu, Ruey-Hsin Liu ; Assignee Taiwan Semiconductor Manufacturing Co Tsmc Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10497795/en?oq=US10497795.html (дата обращения: ДД.ММ.ГГГГ).