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Pat. 10505012 United States, Int. Cl.22 H01L 29/66, H01L 29/06, H01L 29/40, H01L 29/739, H02M 7/219. Insulated gate bipolar transistors and fabrication methods thereof : Appl. N 15/882354 : Filed 29.01.2018 : Pub. 10.12.2019 : / Lei Bing Yuan ; Assignee Semiconductor Manufacturing International Shanghai Corp, Semiconductor Manufacturing International Beijing Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10505012/en?oq=US10505012.html (дата обращения: ДД.ММ.ГГГГ).