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Pat. 10515706 United States, Int. Cl.22 G11C 16/30, H02M 3/07. Voltage generation circuit which is capable of executing high-speed boost operation : Appl. N 16/273979 : Filed 12.02.2019 : Pub. 24.12.2019 : / Tatsuro Midorikawa, Masami Masuda ; Assignee Toshiba Memory Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10515706/en?oq=US10515706.html (дата обращения: ДД.ММ.ГГГГ).