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Pat. 10530169 United States, Int. Cl.22 H02M 3/158, H01L 23/495, H01L 23/528, H01L 23/62, H01L 25/07, H01L 27/02, H01L 27/088, H01L 29/10, H01L 29/20, H01L 29/40, H01L 29/417, H02J 7/00, H02M 1/088, H02M 3/157, H03K 3/012, H03K 3/356, H03K 17/10, H03K 19/0185, H02M 1/00, H02M 3/155. Pulsed level shift and inverter circuits for GaN devices : Appl. N 16/151695 : Filed 04.10.2018 : Pub. 07.01.2020 : / Daniel Marvin Kinzer, Santosh Sharma, Ju Zhang ; Assignee Navitas Semiconductor Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10530169/en?oq=US10530169.html (дата обращения: ДД.ММ.ГГГГ).