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Pat. 10580798 United States, Int. Cl.22 H01L 29/786, G11C 5/14, G11C 11/24, G11C 11/401, H01L 27/105, H01L 27/108, H01L 27/12, H01L 29/04, H01L 29/24, H01L 29/423, H01L 29/49, H01L 29/66, G11C 11/404, G11C 11/412, H02M 3/07. Semiconductor device : Appl. N 15/404771 : Filed 12.01.2017 : Pub. 03.03.2020 : / Kiyoshi Kato ; Assignee Semiconductor Energy Laboratory Co Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10580798/en?oq=US10580798.html (дата обращения: ДД.ММ.ГГГГ).