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Pat. 10580874 United States, Int. Cl.22 H01L 51/05, B60L 15/00, H01L 21/04, H01L 29/10, H01L 29/16, H01L 29/40, H01L 29/66, H01L 29/78, B61C 3/00, B61C 17/00, B66B 11/04, H02M 7/537, H02P 27/06. Semiconductor device with silicon oxide layer having element double bonded to oxygen, semiconductor device manufacturing method, inverter circuit, driving device, vehicle, and elevator : Appl. N 15/695597 : Filed 05.09.2017 : Pub. 03.03.2020 : / Tatsuo Shimizu ; Assignee Toshiba Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10580874/en?oq=US10580874.html (дата обращения: ДД.ММ.ГГГГ).