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Pat. 10580889 United States, Int. Cl.22 H01L 29/423, H01L 21/265, H01L 21/266, H01L 29/16, H01L 29/66, H01L 29/78, H02M 7/5387. Semiconductor device and method of manufacturing thereof, and power conversion apparatus : Appl. N 16/233493 : Filed 27.12.2018 : Pub. 03.03.2020 : / Yasuhiro Kagawa ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10580889/en?oq=US10580889.html (дата обращения: ДД.ММ.ГГГГ).