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Pat. 10581426 United States, Int. Cl.22 G05F 1/00, H01L 21/8249, H01L 25/16, H01L 27/06, H02M 3/335, H03K 17/14. Source down power FET with integrated temperature sensor : Appl. N 16/297963 : Filed 11.03.2019 : Pub. 03.03.2020 : / Haian Lin, Frank Alexander Baiocchi, Masahiko Higashi, Namiko Hagane ; Assignee Texas Instruments Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10581426/en?oq=US10581426.html (дата обращения: ДД.ММ.ГГГГ).