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Pat. 10587194 United States, Int. Cl.22 H03B 1/00, H01L 23/482, H01L 23/522, H01L 23/528, H01L 27/06, H01L 29/417, H01L 29/778, H01L 29/872, H02M 1/088, H02M 1/096, H02M 3/158, H03K 3/00, H03K 17/687, H01L 27/088, H01L 29/20, H01L 29/861. Power transistor with distributed gate : Appl. N 14/831742 : Filed 20.08.2015 : Pub. 10.03.2020 : / Daniel M. Kinzer ; Assignee Navitas Semiconductor Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10587194/en?oq=US10587194.html (дата обращения: ДД.ММ.ГГГГ).