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Pat. 10600779 United States, Int. Cl.22 H01L 27/06, H01L 21/768, H01L 23/532, H01L 23/535, H01L 27/07, H01L 29/08, H01L 29/36, H01L 29/40, H01L 29/417, H01L 29/45, H01L 29/66, H01L 29/739, H01L 29/861, H02M 7/5387, H02P 27/06. Semiconductor device, semiconductor device manufacturing method, and power conversion apparatus : Appl. N 15/836949 : Filed 11.12.2017 : Pub. 24.03.2020 : / Ryu Kamibaba, Masayoshi Tarutani, Shinya Soneda ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10600779/en?oq=US10600779.html (дата обращения: ДД.ММ.ГГГГ).