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Pat. 10600901 United States, Int. Cl.22 H01L 29/20, H01L 21/02, H01L 29/205, H01L 29/43, H01L 29/66, H01L 29/778, H03F 1/32, H01L 29/201, H01L 29/51, H02M 3/28. Compound semiconductor device and manufacturing method thereof : Appl. N 15/168623 : Filed 31.05.2016 : Pub. 24.03.2020 : / Junji Kotani, Norikazu Nakamura, Tetsuro Ishiguro ; Assignee Fujitsu Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10600901/en?oq=US10600901.html (дата обращения: ДД.ММ.ГГГГ).