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Pat. 10601307 United States, Int. Cl.22 H02M 1/00, H01L 23/00, H01L 23/64, H01L 25/07, H01L 25/18, H01L 27/06, H01L 29/94, H02M 1/34, H02M 7/48. Semiconductor device and method for manufacturing the same : Appl. N 16/450115 : Filed 24.06.2019 : Pub. 24.03.2020 : / Yasutaka Shimizu, Yuji Miyazaki, Kazuya Okada ; Assignee Mitsubishi Electric Corp ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10601307/en?oq=US10601307.html (дата обращения: ДД.ММ.ГГГГ).