Библиографическая ссылка на патент
Pat. 10622452 United States, Int. Cl.22 H01L 29/423, H01L 23/528, H01L 27/06, H01L 29/06, H01L 29/08, H01L 29/10, H01L 29/417, H01L 29/66, H01L 29/78, H01L 49/02, H02M 3/158. Transistors with dual gate conductors, and associated methods : Appl. N 16/000719 : Filed 05.06.2018 : Pub. 14.04.2020 : / Tom K. Castro, Marco A. Zuniga, Badredin Fatemizadeh, Adam Brand, John Xia, Rajwinder Singh, Min Xu, Chi-Nung Ni ; Assignee Maxim Integrated Products Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10622452/en?oq=US10622452.html (дата обращения: ДД.ММ.ГГГГ).