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Pat. 10651305 United States, Int. Cl.22 H01L 29/778, H01L 21/02, H01L 21/285, H01L 29/10, H01L 29/15, H01L 29/205, H01L 29/40, H01L 29/45, H01L 29/49, H01L 29/66, H02M 1/42, H03F 1/32, H03F 3/193, H03F 3/195, H03F 3/21, H03F 3/24, H01L 21/24, H01L 21/28, H01L 29/08, H01L 29/20, H01L 29/36, H02M 1/00, H02M 3/335. Compound semiconductor device with quantum well structure, power supply device, and high-frequency amplifier : Appl. N 16/045960 : Filed 26.07.2018 : Pub. 12.05.2020 : / Junji Kotani, Norikazu Nakamura, Hisao Shigematsu ; Assignee Fujitsu Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10651305/en?oq=US10651305.html (дата обращения: ДД.ММ.ГГГГ).