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Pat. 10651317 United States, Int. Cl.22 H01L 23/58, H01L 21/761, H01L 29/06, H01L 29/20, H01L 29/205, H01L 29/40, H01L 29/66, H01L 29/778, H01L 29/861, H01L 29/872, H02M 7/00. High-voltage lateral GaN-on-silicon Schottky diode : Appl. N 15/223455 : Filed 29.07.2016 : Pub. 12.05.2020 : / Anthony Kaleta, Douglas Carlson, Timothy E. Boles ; Assignee Macom Technology Solutions Holdings Inc ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10651317/en?oq=US10651317.html (дата обращения: ДД.ММ.ГГГГ).