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Pat. 10665710 United States, Int. Cl.22 H01L 29/15, H01L 21/02, H01L 21/285, H01L 21/311, H01L 21/56, H01L 21/76, H01L 23/31, H01L 23/495, H01L 29/10, H01L 29/20, H01L 29/205, H01L 29/45, H01L 29/66, H01L 29/778, H01L 31/0256, H01L 21/762, H02M 1/00, H02M 1/42, H02M 3/335, H02M 7/5387, H03F 1/32, H03F 3/19, H03F 3/21. Compound semiconductor device and fabrication method : Appl. N 16/238094 : Filed 02.01.2019 : Pub. 26.05.2020 : / Atsushi Yamada, Junji Kotani ; Assignee Fujitsu Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10665710/en?oq=US10665710.html (дата обращения: ДД.ММ.ГГГГ).