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Pat. 10680073 United States, Int. Cl.22 H01L 29/20, H01L 21/02, H01L 21/3115, H01L 29/205, H01L 29/40, H01L 29/66, H01L 29/778, H02M 3/335, H03F 1/32, H03F 3/19, H01L 29/45, H02M 1/00, H02M 3/337. Semiconductor device and manufacturing method thereof : Appl. N 16/036731 : Filed 16.07.2018 : Pub. 09.06.2020 : / Shirou Ozaki, Naoya Okamoto ; Assignee Fujitsu Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10680073/en?oq=US10680073.html (дата обращения: ДД.ММ.ГГГГ).