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Pat. 10763800 United States, Int. Cl.22 H01L 29/66, H01L 21/265, H01L 29/78, H02M 1/42, H02M 3/28, H03F 1/02, H03F 3/183. Semiconductor device and manufacturing method thereof : Appl. N 16/296384 : Filed 08.03.2019 : Pub. 01.09.2020 : / Hee Hwan Ji, Tae Ho Kim ; Assignee Key Foundry Co Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10763800/en?oq=US10763800.html (дата обращения: ДД.ММ.ГГГГ).