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Pat. 10784372 United States, Int. Cl.22 H01L 29/78, H01L 27/085, H01L 29/06, H01L 29/10, H01L 29/40, H01L 29/417, H01L 29/66, H01L 29/80, H01L 29/808, H02M 7/00, H01L 29/423. Semiconductor device with high voltage field effect transistor and junction field effect transistor : Appl. N 16/123253 : Filed 06.09.2018 : Pub. 22.09.2020 : / Young Bae Kim ; Assignee Key Foundry Co Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10784372/en?oq=US10784372.html (дата обращения: ДД.ММ.ГГГГ).