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Pat. 10790386 United States, Int. Cl.22 H01L 29/78, H01L 21/02, H01L 21/04, H01L 29/04, H01L 29/08, H01L 29/10, H01L 29/16, H01L 29/36, H01L 29/417, H01L 29/423, H01L 29/47, H01L 29/66, B60L 50/50, H01L 29/06, H01L 29/872, H02M 7/5387, H02P 27/08. Silicon carbide semiconductor device with horizontal and vertical current flow : Appl. N 16/216333 : Filed 11.12.2018 : Pub. 29.09.2020 : / Yuan Bu, Hiroshi Miki, Naoki Tega, Naoki Watanabe, Digh Hisamoto, Takeru Suto ; Assignee Hitachi Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10790386/en?oq=US10790386.html (дата обращения: ДД.ММ.ГГГГ).