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Pat. 10796917 United States, Int. Cl.22 H01L 21/28, H01L 21/02, H01L 23/495, H01L 29/51, H01L 29/66, H01L 29/778, H02M 5/458, H03F 1/32, H03F 3/193, H03F 3/24, H01L 29/20, H01L 29/423, H02M 1/00, H02M 3/335, H02M 3/337. Method for manufacturing gate insulator for HEMT : Appl. N 16/385161 : Filed 16.04.2019 : Pub. 06.10.2020 : / Shirou Ozaki, Kozo Makiyama, Naoya Okamoto ; Assignee Fujitsu Ltd ; NN p. : patents.google.com : URL: https://patents.google.com/patent/US10796917/en?oq=US10796917.html (дата обращения: ДД.ММ.ГГГГ).